PDTC114E

Features: *Built-in bias resistors*Simplified circuit design*Reduction of component count*Reduced pick and place costs.ApplicationGeneral purpose switching and amplificationInverter and interface circuitsCircuit driver.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO co...

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SeekIC No. : 004457575 Detail

PDTC114E: Features: *Built-in bias resistors*Simplified circuit design*Reduction of component count*Reduced pick and place costs.ApplicationGeneral purpose switching and amplificationInverter and interface ci...

floor Price/Ceiling Price

Part Number:
PDTC114E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

*Built-in bias resistors
*Simplified circuit design
*Reduction of component count
*Reduced pick and place costs.



Application

General purpose switching and amplification
Inverter and interface circuits
Circuit driver.



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base 50 V
VEBO emitter-base voltage open collector 10 V
VI input voltage
positive
negative
 

+40

-10

V
V
IO output current (DC)   100 mA
ICM peak collector current   100 mA
Ptot

total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883

Tamb 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3

500
250
250
200
150
250
250

mW
mW
mW
mW
mW
mW
mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   150 °C
Tamb operating ambient temperature   −65 +150 °C



Description

PDTC114E NPN resistor-equipped transistor (see"Simplified outline,symbol and pinning" for package details).


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