Features: *Built-in bias resistors*Simplified circuit design*Reduction of component count*Reduced pick and place costs.ApplicationGeneral purpose switching and amplificationInverter and interface circuitsCircuit driver.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO co...
PDTC114E: Features: *Built-in bias resistors*Simplified circuit design*Reduction of component count*Reduced pick and place costs.ApplicationGeneral purpose switching and amplificationInverter and interface ci...
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Transistors Switching (Resistor Biased) TRANS RET TAPE-7
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | − | 50 | V |
VCEO | collector-emitter voltage | open base | − | 50 | V |
VEBO | emitter-base voltage | open collector | − | 10 | V |
VI | input voltage positive negative |
− |
+40 -10 |
V V | |
IO | output current (DC) | − | 100 | mA | |
ICM | peak collector current | − | 100 | mA | |
Ptot |
total power dissipation |
Tamb 25 °C note 1 note 1 note 1 note 1 note 1 notes 1 and 2 notes 2 and 3 |
− |
500 |
mW mW mW mW mW mW mW |
Tstg | storage temperature | −65 | +150 | °C | |
Tj | junction temperature | − | 150 | °C | |
Tamb | operating ambient temperature | −65 | +150 | °C |