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PDTC144ET

Features: ` Built-in bias resistors R1 and R2 (typ. 47 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors.Pi...

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PDTC144ET: Features: ` Built-in bias resistors R1 and R2 (typ. 47 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction in...

PDTC144ET Data Sheet

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Part Number:
PDTC144ET
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

` Built-in bias resistors R1 and R2 (typ. 47 k each)
` Simplification of circuit design
` Reduces number of components and board space.


Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive
negative		   -
-		 +40
-10		 V
V
IO output current (DC)   - 100 mA
ICM peak collector current   - 100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 250 mW
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

NPN resistor-equipped transistor in a SOT23 plastic package.

PNP complement: PDTC144ET.


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