PDTC144ES

Features: ` Built-in bias resistors R1 and R2 (typ. 47 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors.Pi...

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PDTC144ES Picture
SeekIC No. : 004457617 Detail

PDTC144ES: Features: ` Built-in bias resistors R1 and R2 (typ. 47 k each)` Simplification of circuit design` Reduces number of components and board space.Application· Especially suitable for space reduction in...

floor Price/Ceiling Price

Part Number:
PDTC144ES
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

` Built-in bias resistors R1 and R2 (typ. 47 k each)
` Simplification of circuit design
` Reduces number of components
and board space.




Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive
negative
-
-

+40
-10

V
V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 500 mW
Tstg storage temperature -65 +150
Tj junction temperature - 150
Tamb operating ambient temperature -65 +150



Description

NPN resistor-equipped transistor in a TO-92; SOT54 plastic package.

PNP complement: PDTC144ES.


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