PDTC124TEF

Note
1. For mounting conditions, see "Thermal considerations and footprint design for SOT490 in the SC18
Data Handbook".

NPN resistor equipped transistor in a SOT490 (SC-89)plastic package. PDTC124TEF has many unique features: The first one is built-in bias resistors R1 and R2(typ. 22 kW each).The second one is 250 mW total power dissipation.The third one is very small 1.6 mm ´ 0.85 mm thin package.The forth one is flat leads.The fifth one is improved thermal behaviour.The sixth one is it reduces number of components and required PCB area.Besides, PDTC124TEF also has three applications:The first one is general purpose switching and amplification.The second one is inverter circuit configurations without use of external resistors.The third one is circuit driver.

There are some limiting values about PDTC124TEF.collector-base voltage, open emitter(VCBO) is 50 V max.collector-emitter voltage, open base(VCEO) is 50 V max.emitter-base voltage open collector(VEBO) is 10 V max.peak collector current(ICM) is 100 mA max.peak collector current(ICM) is 100 mA max.total power dissipation(Ptot,Tamb is lower than 25 °C) is 250 mW max.storage temperature(Tstg) is -65 +150°C.junction temperature(Tj) is 150 °C max.operating ambient temperature(Tamb) is -65°C min and +150°C max.

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