PDTC124ET

Features: ` Built-in bias resistors R1 and R2 (typ. 22 k each)` Simplification of circuit design` Reduces number of components and boardspace.Application· Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors.Pin...

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PDTC124ET Picture
SeekIC No. : 004457597 Detail

PDTC124ET: Features: ` Built-in bias resistors R1 and R2 (typ. 22 k each)` Simplification of circuit design` Reduces number of components and boardspace.Application· Especially suitable for space reduction in ...

floor Price/Ceiling Price

Part Number:
PDTC124ET
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

` Built-in bias resistors R1 and R2 (typ. 22 k each)
` Simplification of circuit design
` Reduces number of components and boardspace.



Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
-
50
V
VCEO
collector-emitter voltage open base
-
50
V
VEBO
emitter-base voltage open collector
-
10
V
VI
input voltage
positive
negative
-
-
40
-10
V
V
IO
output current (DC)
-
100
mA
ICM
peak collector current
-
100
mA
Ptot
total power dissipation Tamb 25; note 1
-
250
mW
TSTG
Storage temperature
65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.


Description

NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTC124ET.


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