PDTC123EEF,115

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 250mW
Resistor - Base (R1) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Resistor - Emitter Base (R2) (Ohms): 2.2k
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89


Parameters:

Technical/Catalog Information	PDTC123EEF,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	250mW
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	2.2K
Vce Saturation (Max) @ Ib, Ic	150mV @ 500A, 10mA
Current - Collector Cutoff (Max)	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA, 5V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-89
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT490; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PDTC123EEF,115 PDTC123EEF,115 568 2151 2 ND 56821512ND 568-2151-2