Transistors RF MOSFET Power POWER R.F.
PD55008STR-E: Transistors RF MOSFET Power POWER R.F.
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 17 dB at 500 MHz |
Output Power : | 8 W | Drain-Source Breakdown Voltage : | 40 V |
Continuous Drain Current : | 4 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Straight Lead) |
Packaging : | Reel |
Technical/Catalog Information | PD55008STR-E |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 40V |
Current Rating | 4A |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PD55008STR E PD55008STRE |