Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• 10Gb/s Optical Receivers• Test and MeasurementSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 2 mA...
PD030: Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• 10Gb/s Optical Receivers• Test and M...
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Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectri...
Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectri...
PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
2 |
mA |
Reverse Current |
- |
100 |
A |
Reverse Voltage |
- |
30 |
V |
Optical input power |
- |
5 |
mW |
Operating Case Temperature |
-40 |
+85 |
|
Storage Temperature |
-40 |
+85 |
|
Soldering temperature (10 seconds) |
- |
+250 |
The PD030 is an InGaAs photodiode with a photosensitive region 30m in diameter. It is intended for use in very high speed, low noise communication systems (up to 10Gb/s data rates) and for use in optical test and measurement equipment.
Planar semiconductor design and dielectric passivation of PD030 provide low noise performance.
Reliability of PD030 is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V).The PD030 can be assembled on a ceramic submount or in a TO can. It can be pigtailed with SC,FC, or ST connectors (UPC or APC). It can also be mounted in an SC, ST of FC receptacle.Custom packages are an option.