Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• 10Gb/s Optical Receivers• Test and MeasurementSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 2 mA...
PD030-003-1xx: Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• 10Gb/s Optical Receivers• Test and M...
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Features: • Planar Structure• Very High Speed• Low Dark Current• Dielectri...
PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
2 |
mA |
Reverse Current |
- |
100 |
A |
Reverse Voltage |
- |
30 |
V |
Optical input power |
- |
5 |
mW |
Operating Case Temperature |
-40 |
+85 |
|
Storage Temperature |
-40 |
+85 |
|
Soldering temperature (10 seconds) |
- |
+250 |
The PD030-003-1xx is an InGaAs photodiode with a photosensitive region 30m in diameter. It is intended for use in very high speed, low noise communication systems (up to 10Gb/s data rates) and for use in optical test and measurement equipment.
Planar semiconductor design and dielectric passivation of PD030-003-1xx provide low noise performance.
Reliability of PD030-003-1xx is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V).The device can be assembled on a ceramic submount or in a TO can. PD030-003-1xx can be pigtailed with SC,FC, or ST connectors (UPC or APC). It can also be mounted in an SC, ST of FC receptacle.Custom packages are an option.