Features: · SOT23 package· Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation· Reduced printed-circuit board requirements.Application` Major application segments Automotive 42 V power Telecom infrastruct...
PBSS8110T: Features: · SOT23 package· Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation· Reduced printed-circuit ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 120 | V |
VCEO | collector-emitter voltage | open base | - | 100 | V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 1 | A | |
ICM | peak collector current | limited by Tj max | - | 3 | A |
IB | base current (DC) | - | 300 | mA | |
Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 300 | mW |
Tamb 25 °C; note 2 | - | 480 | mW | ||
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C | |
Tstg | storage temperature | -65 | +150 | °C |
NPN low VCEsat transistor PBSS8110T in a SOT23 plastic package. PNP complement: PBSS9110T.