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PBSS8110S

Features: · SOT54 package· Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation.Application` Automotive 42 V power` Telecom infrastructure` General industrial applications` Power management DC/DC converter...

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PBSS8110S: Features: · SOT54 package· Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation.Application` Automotive 4...

PBSS8110S Data Sheet

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Part Number:
PBSS8110S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/10

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Product Details

Description



Features:

· SOT54 package
· Low collector-emitter saturation voltage VCEsat
· High collector current capability: IC and ICM
· Higher efficiency leading to less heat generation.


Application

` Automotive 42 V power
` Telecom infrastructure
` General industrial applications
` Power management
DC/DC converters
Supply line switching
Battery charger
LCD backlighting.
` Peripheral drivers
Generic driver (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 120 V
VCEO collector-emitter voltage open base - 100 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM peak collector current Tj max - 3 A
IB base current (DC)   - 300 mA
Ptot total power dissipation Tamb 25 °C; note 1 - 830
 mW
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C
Tstg storage temperature   -65 +150 °C
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.


Description

NPN low VCEsat BISS transistor PBSS8110S in a SOT54 plastic package.


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