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PBSS5540Z

Features: · High current (max. 10 A)· Low voltage (max. 40 V)· Low VCEsat.Application· Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers· VCEsat critical applications such as the latest low supply voltage IC applications· All battery driven e...

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SeekIC No. : 004455683 Detail

PBSS5540Z: Features: · High current (max. 10 A)· Low voltage (max. 40 V)· Low VCEsat.Application· Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers· VCEs...

PBSS5540Z Data Sheet

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Part Number:
PBSS5540Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High current (max. 10 A)
· Low voltage (max. 40 V)
· Low VCEsat.


Application

· Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers
· VCEsat critical applications such as the latest low supply voltage IC applications
· All battery driven equipment to save battery power.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base -

-40

 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC)   - -5 A
ICM average collector current   - -10 A
IBM peak base current   - -2 A
Ptot total power dissipation Tamb 25 °C; note 1
- 1.35 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C

Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook".




Description

PNP low VCEsat transistor PBSS5540Z in a SOT223 plastic package.

NPN complement: PBSS4540Z.


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