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PBSS5540X

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High efficiency leading to less heat generation.Application· Supply line switching circuits· Battery management applications· DC/DC converter applications· Strobe flash units· Medium power d...

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SeekIC No. : 004455682 Detail

PBSS5540X: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High efficiency leading to less heat generation.Application· Supply line switching circuit...

PBSS5540X Data Sheet

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Part Number:
PBSS5540X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability: IC and ICM
· High efficiency leading to less heat generation.


Application

· Supply line switching circuits
· Battery management applications
· DC/DC converter applications
· Strobe flash units
· Medium power driver (e.g. relays, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base -

-40

 V
VEBO emitter-base voltage open collector - -6 V
ICM collector current (DC) tp 1 ms - -10 A
ICRP repetitive peak collector current tp 10 ms; 0.2   -5 A
IC average collector current   - -4 A
IBM peak base current tp 1 ms   -2 A
IB base current (DC)     -1 A
Ptot total power dissipation Tamb 25 °C
tp 10 ms; 0.2; note 1
note 1
note 2
note 3
note 4		 -
-
-
-
-		 2.5
0.55
1
1.4
1.6

 W
W
W
W
W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150  
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.


Description

PNP low VCEsat transistor PBSS5540X in a medium power SOT89 (SC-62) package.

NPN complement: PBSS4540X.




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