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PBSS5480X

Features: · High hFE and low VCEsat at high current operation· High collector current IC: 4 A· High efficiency leading to less heat generation.Application· Medium power peripheral drivers (e.g. fans and motors)· Strobe flash units for digital still cameras and mobile phones· Inverter applications ...

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SeekIC No. : 004455680 Detail

PBSS5480X: Features: · High hFE and low VCEsat at high current operation· High collector current IC: 4 A· High efficiency leading to less heat generation.Application· Medium power peripheral drivers (e.g. fans...

PBSS5480X Data Sheet

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Part Number:
PBSS5480X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High hFE and low VCEsat at high current operation
· High collector current IC: 4 A
· High efficiency leading to less heat generation.


Application

· Medium power peripheral drivers (e.g. fans and motors)
· Strobe flash units for digital still cameras and mobile phones
· Inverter applications (e.g. TFT displays)
· Power switch for LAN and ADSL systems
· Medium power DC-to-DC conversion
· Battery chargers.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -80 V
VCEO collector-emitter voltage open base -

-80

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC) note 1 - -4 A
ICM average collector current tp 1 ms or limited by Tj(max) - -10 A
ICRP repetitive peak collector current tp 10 ms; 0.1 - -6 A
IB base current (DC)   - -1 A
IBM peak base current tp 1 ms - -2 A
Ptot total power dissipation Tamb 25 °C
notes 2 and 3
note 3
note 4
note 1
note 5		 -
-
-
-
-		 2.5
550
1
1.4
1.6		 W
W
W
W
W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2. Operated under pulsed conditions; pulse width tp 10 ms; duty cycle 0.1.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.


Description

PNP low VCEsat (BISS) transistor PBSS5480X in a SOT89 (SC-62) plastic package.

NPN complement: PBSS4480X.


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