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PBSS5350T

Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat generation.Application· Power management applications· Low and medium power DC/DC convertors· Supply lin...

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SeekIC No. : 004455677 Detail

PBSS5350T: Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat gene...

PBSS5350T Data Sheet

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Part Number:
PBSS5350T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
· High collector current capability
· High collector current gain
· Improved efficiency due to reduced heat generation.


Application

· Power management applications
· Low and medium power DC/DC convertors
· Supply line switching
· Battery chargers
· Linear voltage regulation with low voltage drop-out (LDO).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base -

50

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 2 A
ICRP repetitive peak collector current note 1 -   A
ICM average collector current single peak - 5 A
IBM peak base current   - 0.5 A
Ptot total power dissipation Tamb 25 °C;note 2
 -
550

mW
Tamb 25 °C;note 3 -   mW
Tamb 25 °C;note 4 -   mW
Tamb 25 °C;note 1 and 2 -   W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width tp £ 100 ms; duty cycle d   0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.


Description

PNP low VCEsat transistor PBSS5350T in a SOT23 plastic package.

NPN complement: PBSS4350T.


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