PBSS5350S Selling Leads, Price trend, PBSS5350S DataSheet download, circuit diagram from SeekIC.com

Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 3 A continuous current· High current switching· Improved device reliability due to reduced heat generationApplication· Medium power switching and muting· Linear regulators· DC/DC convertor· Supply line swi...

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SeekIC No. : 004455675 Detail

PBSS5350S: Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 3 A continuous current· High current switching· Improved device reliability due to reduced heat generatio...

PBSS5350S Data Sheet

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Part Number:: PBSS5350S
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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What is this?

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Transistors Bipolar (BJT) NPN 15V .5A LOW SAT
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US $.05 - .07 / Piece

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Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal ...

Product Details

Description

Features:

· High power dissipation (830 mW)
· Ultra low collector-emitter saturation voltage
· 3 A continuous current
· High current switching
· Improved device reliability due to reduced heat generation

Application

· Medium power switching and muting
· Linear regulators
· DC/DC convertor
· Supply line switching circuits
· Battery management applications
· Strobe flash units
· Heavy duty battery powered equipment (motor and lamp drivers).

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	-60	V
V_CEO	collector-emitter voltage	open base	-	-50	V
V_EBO	emitter-base voltage	open collector	-	-6	V
I_C	collector current (DC)		-	-3	A
I_CM	average collector current		-	-5	A
I_BM	peak base current			-1	A
P_tot	total power dissipation	Tamb 25 °C; notes 1	-	830	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	ambient temperature		-65	+150	°C

Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

Description

PNP low V_CEsat transistor PBSS5350S in a SOT54 plastic package.

NPN complement: PBSS4350S.

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PBSS5350S

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