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PBSS5320T

Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat generation.Application· Power management applications· Low and medium power DC/DC convertors· Supply lin...

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SeekIC No. : 004455672 Detail

PBSS5320T: Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat gene...

PBSS5320T Data Sheet

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Part Number:
PBSS5320T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
· High collector current capability
· High collector current gain
· Improved efficiency due to reduced heat generation.


Application

· Power management applications
· Low and medium power DC/DC convertors
· Supply line switching
· Battery chargers
· Linear voltage regulation with low voltage drop-out (LDO).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -20 V
VCEO collector-emitter voltage open base -

-20

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC) note 4 - -2 A
ICRP repetitive peak collector current note 1 - -3 A
ICM average collector current single peak - -5 A
IBM peak base current   - -0.5 A
Ptot total power dissipation Tamb 25 °C;note 2
 - 300 mW
Tamb 25 °C;note 3 - 480 mW
Tamb 25 °C;note 4 - 540 mW
Tamb 25 °C;note 1 and 2 - 1.2 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2.


Description

PNP low VCEsat transistor PBSS5320T in a SOT23 plastic package.

NPN complement: PBSS4320T.


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