Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generationApplication· Supply line switching circuits· Battery management applications· DC/DC converter applications· Strobe flash units· Heavy duty battery powered equipm...
PBSS5320D: Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generationApplication· Supply line switching circuits· Battery manageme...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per transistor unless otherwise specified | |||||
VCBO | collector-base voltage | open emitter | - | -20 | V |
VCEO | collector-emitter voltage | open base | - | -20 | V |
VEBO | emitter-base voltage | open collector | - | -5 | V |
IC | collector current (DC) | - | -3 | A | |
ICM | peak collector current | limited by Tj max | - | -5 | A |
IB | base current (DC) | - | -500 | mA | |
Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 600 | mW |
Tamb 25 °C; note 2 | - | 750 | mW | ||
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C | |
Tstg | storage temperature | -65 | +150 | °C |