Features: ·Low collector-emitter saturation voltage VCEsat·High collector current capability: IC and ICM·Higher efficiency leading to less heat generation·Reduced printed-circuit board requirements·Cost effective alternative to MOSFETs in specific applications.Application· Power management·CDC/DC ...
PBSS5250T: Features: ·Low collector-emitter saturation voltage VCEsat·High collector current capability: IC and ICM·Higher efficiency leading to less heat generation·Reduced printed-circuit board requirements·...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | -50 | V |
VCEO | collector-emitter voltage | open base | - |
-50 |
V |
VEBO | emitter-base voltage | open collector | - | -5 | V |
IC | collector current (DC) | - | -2 | A | |
ICM | average collector current | single peak | - | -3 | A |
IB | base current (DC) | - | -300 | A | |
Ptot | total power dissipation | Tamb 25 °C; notes1 |
- | 300 480 |
mW mW |
Tamb 25 °C; notes2 | |||||
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C | |
Tstg | storage temperature | -65 | +150 | °C |