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PBSS5240V

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat generation· Reduced printed-circuit board area requirements.Application` Power management: DC-DC converte...

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SeekIC No. : 004455667 Detail

PBSS5240V: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat gener...

PBSS5240V Data Sheet

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Part Number:
PBSS5240V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High collector current gain (hFE) at high IC
· High efficiency leading to reduced heat generation
· Reduced printed-circuit board area requirements.


Application

` Power management:
DC-DC converter
Supply line switching
Battery charger
LCD back lighting.
` Peripheral driver:
Driver in low supply voltage applications (e.g. lamps, LEDs)
Inductive load drivers (e.g. relay, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base -

-50

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -1.8 A
ICRP repetitive peak collector current note 1 - -2 A
ICM average collector current single peak - -3 A
IB base current (DC)   - -300 A
IBM peak base current   - -1 A
Ptot total power dissipation Tamb 25 °C;note 2
 -
300

mW
Tamb 25 °C;note 3 - 500 mW
Tamb 25 °C;note 4 - 900 mW
Tamb 25 °C;note 1 and 2 - 1.2 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle d 20%, pulse width tp 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.


Description

PNP transistor PBSS5240V providing low VCEsat and high current capability in a SOT666 plastic package.

NPN complement: PBSS4240V.


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