Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistor.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base vol...
PBSS5240T: Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistor.P...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | -40 | V |
VCEO | collector-emitter voltage | open base | - | -40 | V |
VEBO | emitter-base voltage | open collector | - | -5 | V |
IC | collector current (DC) | - | -2 | A | |
ICM | peak collector current | limited by Tj max | - | -3 | A |
IB | base current (DC) | - | -300 | mA | |
Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 300 | mW |
Tamb 25 °C; note 2 | - | 480 | mW | ||
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C | |
Tstg | storage temperature | -65 | +150 | °C |