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PBSS5160T

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High efficiency, reduces heat generation· Reduces printed-circuit board area required· Cost effective replacement for medium power transistors BCP52 and BCX52.Application` Major application ...

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SeekIC No. : 004455664 Detail

PBSS5160T: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High efficiency, reduces heat generation· Reduces printed-circuit board area required· Cos...

PBSS5160T Data Sheet

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Part Number:
PBSS5160T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability: IC and ICM
· High efficiency, reduces heat generation
· Reduces printed-circuit board area required
· Cost effective replacement for medium power transistors BCP52 and BCX52.


Application

` Major application segments:
Automotive
Telecom infrastructure
Industrial.
` Power management:
DC-to-DC conversion
Supply line switching.
` Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -80 V
VCEO collector-emitter voltage open base -

-60

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -0.9 A
ICRP repetitive peak collector current note 1 - -1 A
ICM average collector current single peak - -2 A
IBM peak base current   - -300 A
Ptot total power dissipation Tamb 25 °C;note 2
 -
1

mW
Tamb 25 °C;note 3 - 270 mW
Tamb 25 °C;note 4 - 400 mW
Tamb 25 °C;note 1 and 2 - 1.25 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle d £ 20 %, pulse width tp £ 10 ms.


Description

PNP low VCEsat transistor PBSS5160T in a SOT23 plastic package.

NPN complement: PBSS4160T.


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