Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High collector current gain (hFE) at high IC· High efficiency due to less heat generation· Smaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplication· Dua...
PBSS5160DS: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· High collector current gain (hFE) at high IC· High efficiency due to less heat generation·...
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PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor PBSS5160DS pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.