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PBSS5140S

Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 1 A continuous current· High current switching· Improved device reliability due to reduced heat generation.Application· Medium power switching and muting· Linear regulators· DC/DC converter· LCD back-light...

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SeekIC No. : 004455659 Detail

PBSS5140S: Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 1 A continuous current· High current switching· Improved device reliability due to reduced heat generatio...

PBSS5140S Data Sheet

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Part Number:
PBSS5140S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High power dissipation (830 mW)
· Ultra low collector-emitter saturation voltage
· 1 A continuous current
· High current switching
· Improved device reliability due to reduced heat generation.


Application

· Medium power switching and muting
· Linear regulators
· DC/DC converter
· LCD back-lighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base -

-40

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -1 A
ICM average collector current   - -2 A
IBM peak base current   - -1 A
Ptot total power dissipation Tamb 25 °C; note 1
- 830 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.


Description

PNP low VCEsat transistor PBSS5140S in a SOT54 plastic package. NPN complement: PBSS4140S.


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