Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation· Reduced printed-circuit board requirements· Cost effective alternative to MOSFETS in specific applications.Application` Power management DC...
PBSS5130T: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability: IC and ICM· Higher efficiency leading to less heat generation· Reduced printed-circuit board requireme...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | -30 | V |
VCEO | collector-emitter voltage | open base | - |
-30 |
V |
VEBO | emitter-base voltage | open collector | - | -5 | V |
IC | collector current (DC) | - | -1 | A | |
ICM | average collector current | - | -3 | A | |
IBM | peak base current | - | -300 | A | |
Ptot | total power dissipation | Tamb 25 °C note 1 note 2 |
- - |
300 480 |
mW mW |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C |