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PBSS4520X

Features: · High hFE and low VCEsat at high current operation· High collector current capability: IC maximum 5 A· Higher efficiency leading to less heat generation.Application· Medium power peripheral drivers, e.g. fans and motors· Strobe flash units for DSC and mobile phones· Inverter application...

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SeekIC No. : 004455653 Detail

PBSS4520X: Features: · High hFE and low VCEsat at high current operation· High collector current capability: IC maximum 5 A· Higher efficiency leading to less heat generation.Application· Medium power peripher...

PBSS4520X Data Sheet

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Part Number:
PBSS4520X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High hFE and low VCEsat at high current operation
· High collector current capability: IC maximum 5 A
· Higher efficiency leading to less heat generation.


Application

· Medium power peripheral drivers, e.g. fans and motors
· Strobe flash units for DSC and mobile phones
· Inverter applications, e.g. TFT displays
· Power switch for LAN and ADSL systems
· Medium power DC-to-DC conversion
· Battery chargers.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base -

20

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) tp 1 ms - 5 A
ICM average collector current   - 7 A
IBM peak base current tp 1 ms - 10 A
Ptot total power dissipation Tamb 25 °C
notes 1 and 2
note 2
note 3
note 4
note 5		 - 2.5
0.55
1
1.4
1.6		 W
W
W
W
W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width tp £ 10 ms; duty cycle d 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook".


Description

NPN low VCEsat BISS transistor PBSS4520X in a SOT89 (SC-62) plastic package.

PNP complement: PBSS5520X.


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