Position: Home  > All Categories> Integrated Circuits (ICs) > PBSS4350T

PBSS4350T

Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat generation.Application· Power management applications· Low and medium power DC/DC convertors· Supply lin...

product image

PBSS4350T Picture
See larger image
SeekIC No. : 004455650 Detail

PBSS4350T: Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat gene...

PBSS4350T Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PBSS4350T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
· High collector current capability
· High collector current gain
· Improved efficiency due to reduced heat generation.


Application

· Power management applications
· Low and medium power DC/DC convertors
· Supply line switching
· Battery chargers
· Linear voltage regulation with low voltage drop-out (LDO).


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
 collector-base voltage open emitter
-
50
V
VCEO
 collector-emitter voltage open base
-
50
V
VEBO
 emitter-base voltage open collector
-
5
V
IC
 collector current (DC)  
-
2
A
ICRP
 repetitive peak collector current note 1
-
3
A
ICM
 peak collector current single peak
-
5
A
IB
 base current (DC)
-
0.5
A
Ptot
 total power dissipation Tamb 25; note 2
-
300
mW
Tamb 25; note 3
-
480
mW
Tamb 25; note 4
-
540
mW
Tamb 25; notes 1 and 2
-
1.2
W
TSTG
 Storage temperature
65
+150
Tj
 junction temperature
-
150
Tamb
 operating ambient temperature
-65
+150

Notes
1. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle d 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.




Description

NPN low VCEsat transistor PBSS4350T in a SOT23 plastic package. PNP complement: PBSS5350T.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Kits
IT243
UVSC-110-4E1
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Isolators
HCPL062N
HCPL316J
Switches
US32DMRJ
HBGQ22P-11ET
Prototyping Products
AVT4168
DE1
View more