PBSS4350S,126

TRANS NPN 50V 3A LOW SAT TO92

product image

PBSS4350S,126 Picture
SeekIC No. : 003436080 Detail

PBSS4350S,126: TRANS NPN 50V 3A LOW SAT TO92

floor Price/Ceiling Price

Part Number:
PBSS4350S,126
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: NXP Semiconductors
Transistor Type: NPN Clamping Voltage : 38 V
Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): - Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): - Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 830mW
Frequency - Transition: 100MHz Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3    

Description

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Current - Collector (Ic) (Max): 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Supplier Device Package: TO-92-3
Power - Max: 830mW


Parameters:

Technical/Catalog InformationPBSS4350S,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)3A
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic90mV @ 50mA, 500mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingTape & Box (TB)
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PBSS4350S,126
PBSS4350S,126



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Isolators
Memory Cards, Modules
Cables, Wires - Management
LED Products
Integrated Circuits (ICs)
View more