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PBSS4350S

Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 3 A continuous current· High current switching· Improved device reliability due to reduced heat generationApplication· Medium power switching and muting· Linear regulators· DC/DC convertor· Supply line swi...

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SeekIC No. : 004455648 Detail

PBSS4350S: Features: · High power dissipation (830 mW)· Ultra low collector-emitter saturation voltage· 3 A continuous current· High current switching· Improved device reliability due to reduced heat generatio...

PBSS4350S Data Sheet

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Part Number:
PBSS4350S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High power dissipation (830 mW)
· Ultra low collector-emitter saturation voltage
· 3 A continuous current
· High current switching
· Improved device reliability due to reduced heat generation


Application

· Medium power switching and muting
· Linear regulators
· DC/DC convertor
· Supply line switching circuits
· Battery management applications
· Strobe flash units
· Heavy duty battery powered equipment (motor and lamp drivers).


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base -

50

 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC) tp 1 ms - 3 A
ICM average collector current   - 5 A
IBM peak base current tp 1 ms   1 A
Ptot total power dissipation Tamb 25 °C; note 1 -
 860

 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150  
Tamb ambient temperature   -65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.


Description

NPN low VCEsat transistor PBSS4350S in a SOT54 plastic package.

PNP complement: PBSS5350S.


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