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PBSS4320T

Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat generation.Application· Power management applications· Low and medium power DC/DC convertors· Supply lin...

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SeekIC No. : 004455644 Detail

PBSS4320T: Features: · Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat· High collector current capability· High collector current gain· Improved efficiency due to reduced heat gene...

PBSS4320T Data Sheet

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Part Number:
PBSS4320T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
· High collector current capability
· High collector current gain
· Improved efficiency due to reduced heat generation.


Application

· Power management applications
· Low and medium power DC/DC convertors
· Supply line switching
· Battery chargers
· Linear voltage regulation with low voltage drop-out (LDO).


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
 collector-base voltage open emitter
-
20
V
VCEO
 collector-emitter voltage open base
-
20
V
VEBO
 emitter-base voltage open collector
-
5
V
IC
 collector current (DC)
-
2
A
ICRP
 repetitive peak collector current note 1
-
3
A
ICM
 peak collector current single peak
-
5
A
IB
 base current (DC)
-
0.5
A
Ptot
 total power dissipation Tamb 25; note 2
-
300
mW
Tamb 25; note 3
-
480
mW
Tamb 25; note 4
-
540
mW
Tamb 25; notes 1 and 2
-
1.2
W
TSTG
 Storage temperature
65
+150
Tj
 junction temperature
-
150
Tamb
 operating ambient temperature
-65
+150

Notes
1. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle d 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.




Description

NPN low VCEsat transistor PBSS4320T in a SOT23 plastic package. PNP complement: PBSS5320T.


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