Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat generation· Reduced printed-circuit board area requirements.Application` Power management: DC-DC convert...
PBSS4240V: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat gener...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage | open emitter |
- |
40 |
V |
VCEO |
collector-emitter voltage | open base |
- |
40 |
V |
VEBO |
emitter-base voltage | open collector |
- |
5 |
V |
IC |
collector current (DC) | note 1 |
- |
2 |
A |
ICRP |
repetitive peak collector current | note 2 |
- |
2 |
A |
ICM |
peak collector current |
- |
3 |
A | |
IB |
base current (DC) |
- |
300 |
mA | |
IBM |
peak base current |
- |
1 |
A | |
Ptot |
total power dissipation | Tamb 25; note 3 |
- |
300 |
mW |
Tamb 25; note 4 |
- |
500 |
mW | ||
Tamb 25; note 1 |
- |
900 |
mW | ||
Tamb 25; notes 2 and 3 |
- |
1.2 |
W | ||
TSTG |
Storage temperature |
65 |
+150 |
||
Tj |
junction temperature |
- |
150 |
||
Tamb |
operating ambient temperature |
-65 |
+150 |
NPN transistor PBSS4240V providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V.