PBSS4240V

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat generation· Reduced printed-circuit board area requirements.Application` Power management: DC-DC convert...

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SeekIC No. : 004455641 Detail

PBSS4240V: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain (hFE) at high IC· High efficiency leading to reduced heat gener...

floor Price/Ceiling Price

Part Number:
PBSS4240V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High collector current gain (hFE) at high IC
· High efficiency leading to reduced heat generation
· Reduced printed-circuit board area requirements.



Application

` Power management:
   DC-DC converter
   Supply line switching
   Battery charger
   LCD back lighting.
` Peripheral driver:
   Driver in low supply voltage applications (e.g. lamps and LEDs)
   Inductive load drivers (e.g. relay, buzzers and motors).



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
-
40
V
VCEO
collector-emitter voltage open base
-
40
V
VEBO
emitter-base voltage open collector
-
5
V
IC
collector current (DC) note 1
-
2
A
ICRP
repetitive peak collector current note 2
-
2
A
ICM
peak collector current
-
3
A
IB
base current (DC)
-
300
mA
IBM
peak base current
-
1
A
Ptot
total power dissipation Tamb 25; note 3
-
300
mW
Tamb 25; note 4
-
500
mW
Tamb 25; note 1
-
900
mW
Tamb 25; notes 2 and 3
-
1.2
W
TSTG
Storage temperature
65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

 




Description

NPN transistor PBSS4240V providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V.




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