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PBSS4240DPN

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain hFE at high IC· High efficiency leading to reduced heat generation· Reduced printed-circuit board area requirements.Application` Power management: Complementary MO...

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SeekIC No. : 004455639 Detail

PBSS4240DPN: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High collector current gain hFE at high IC· High efficiency leading to reduced heat generat...

PBSS4240DPN Data Sheet

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Part Number:
PBSS4240DPN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High collector current gain hFE at high IC
· High efficiency leading to reduced heat generation
· Reduced printed-circuit board area requirements.


Application

` Power management:
Complementary MOSFET driver
Dual supply line switching.
` Peripheral driver:
Half and full bridge motor drivers
Multi-phase stepper motor driver.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)
NPN
PNP		   -
-
-		 1.35
-1.1		 A
A
ICRP repetitive peak collector current note 1 - 2 A
ICM average collector current single peak - 3 A
IB base current (DC)   - 300 mA
IBM peak base current   - 1 A
Ptot total power dissipation Tamb 25 °C; note 2
- 370 mW
Tamb 25 °C; note 3 - 310 mW
Tamb 25 °C; note 1 - 1.1 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C; note 2 - 600 mW
Notes
1. Operated under pulsed conditions: duty cycle 20%; pulse width tp 10 ms; mounting pad for collector standard footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.


Description

NPN/PNP low VCEsat transistor PBSS4240DPN pair in a SOT457 (SC-74) plastic package.


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