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PBSS4160T

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency, reduces heat generation· Reduces printed-circuit board area required· Cost effective replacement for medium power transistor BCP55 and BCX55.Application` Major application se...

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SeekIC No. : 004455637 Detail

PBSS4160T: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency, reduces heat generation· Reduces printed-circuit board area required· Cost...

PBSS4160T Data Sheet

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Part Number:
PBSS4160T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/7

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High efficiency, reduces heat generation
· Reduces printed-circuit board area required
· Cost effective replacement for medium power transistor BCP55 and BCX55.


Application

` Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial.
` Power management:
DC-to-DC conversion
Supply line switching.
` Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base -

60

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 0.9 A
ICRP repetitive peak collector current note 1 - 1 A
ICM average collector current single peak - 2 A
IBM peak base current   - 300 A
Ptot total power dissipation Tamb 25 °C;note 2
 -
1

mW
Tamb 25 °C;note 3 - 270 mW
Tamb 25 °C;note 4 - 400 mW
Tamb 25 °C;note 1 and 2 - 1.25 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle d £ 20%, pulse width tp £ 10 ms.


Description

NPN low VCEsat transistor PBSS4160T in a SOT23 plastic package.

PNP complement: PBSS5160T.


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