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PBSS4140V

Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package· Improved thermal behaviour due to flat leads· Excellent coplanarity due to straight leads· Low collector-emitter saturation voltage· High current capabilities· Reduced required PCB area.Application...

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PBSS4140V: Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package· Improved thermal behaviour due to flat leads· Excellent coplanarity due to straight leads· Low co...

PBSS4140V Data Sheet

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Part Number:
PBSS4140V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
· Improved thermal behaviour due to flat leads
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capabilities
· Reduced required PCB area.


Application

· General purpose switching and muting
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM average collector current single peak - 3 A
IBM peak base current   - 2 A
Ptot total power dissipation Tamb 25 °C;note 2
-
300

 mW
Tamb 25 °C;note 3 - 500 mW
Tamb 25 °C;note 1 and 2 - 1.2 m
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Operated under pulsed conditions: tp £ 30 ms; d   0.2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.


Description

NPN low VCEsat transistor PBSS4140V with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V.


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