Features: · Low collector-emitter saturation voltage· High current capabilities.· Improved device reliability due to reduced heat generation.· Enhanced performance over SOT231A general purpose packaged transistors.Application· General purpose switching and muting· LCD backlighting· Supply line swi...
PBSS4140U: Features: · Low collector-emitter saturation voltage· High current capabilities.· Improved device reliability due to reduced heat generation.· Enhanced performance over SOT231A general purpose packa...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCEO | collector-emitter voltage | open base | - |
40 |
V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 1 | A | |
ICM | average collector current | single peak | - | 2 | A |
IBM | peak base current | - | 1 | A | |
Ptot | total power dissipation | Tamb 25 °C;note 1 |
- |
250 |
mW |
Tamb 25 °C;note 2 | - | 350 | mW | ||
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C |