PBSS4140T

Features: · Low collector-emitter saturation voltage· High current capabilities.· Improved device reliability due to reduced heat generation.Application· General purpose switching and muting· LCD backlighting· Supply line switching circuits· Battery driven equipment (mobile phones, video cameras a...

product image

PBSS4140T Picture
SeekIC No. : 004455634 Detail

PBSS4140T: Features: · Low collector-emitter saturation voltage· High current capabilities.· Improved device reliability due to reduced heat generation.Application· General purpose switching and muting· LCD ba...

floor Price/Ceiling Price

Part Number:
PBSS4140T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capabilities.
· Improved device reliability due to reduced heat generation.



Application

· General purpose switching and muting
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM average collector current   - 2 A
IBM peak base current   - 1 A
Ptot total power dissipation Tamb 25 °C;note 1
- 300 mW
Tamb 25 °C;note 2 - 450 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.



Description

NPN low VCEsat transistor PBSS4140T in a SOT23 plastic package.

PNP complement: PBSS5140T.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Tapes, Adhesives
803
Test Equipment
Optical Inspection Equipment
LED Products
Crystals and Oscillators
Resistors
View more