Features: · 600 mW total power dissipation· Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replaces two SOT23 packaged low VCEsat transistors on same PCB area· Reduces required PCB area· Reduced pick and place costs.Ap...
PBSS4140DPN: Features: · 600 mW total power dissipation· Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replaces two SOT23 packaged...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCEO | collector-emitter voltage | open base | - |
40 |
V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 1 | mA | |
ICM | average collector current | - | 2 | A | |
IBM | peak base current | - | 1 | mA | |
Ptot | total power dissipation | Tamb 25 °C; note 1 |
370 | mW | |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C | |
Per device | |||||
Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 600 | mW |