PBSS4140DPN

Features: · 600 mW total power dissipation· Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replaces two SOT23 packaged low VCEsat transistors on same PCB area· Reduces required PCB area· Reduced pick and place costs.Ap...

product image

PBSS4140DPN Picture
SeekIC No. : 004455632 Detail

PBSS4140DPN: Features: · 600 mW total power dissipation· Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replaces two SOT23 packaged...

floor Price/Ceiling Price

Part Number:
PBSS4140DPN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· 600 mW total power dissipation
· Low collector-emitter saturation voltage
· High current capability
· Improved device reliability due to reduced heat generation
· Replaces two SOT23 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.



Application

· General purpose switching and muting
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 mA
ICM average collector current   - 2 A
IBM peak base current   - 1 mA
Ptot total power dissipation Tamb 25 °C; note 1
  370 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C; note 1 - 600 mW
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.



Description

NPN/PNP low VCEsat transistor PBSS4140DPN pair in an SC-74 (SOT457) plastic package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Soldering, Desoldering, Rework Products
Audio Products
Line Protection, Backups
Cables, Wires - Management
RF and RFID
View more