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PBSS4120T

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to less heat generation· Reduced printed-circuit board requirements· Cost effective alternative to MOSFETs in specific applications.Application` Power management DC/DC...

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SeekIC No. : 004455630 Detail

PBSS4120T: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to less heat generation· Reduced printed-circuit board requirements...

PBSS4120T Data Sheet

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Part Number:
PBSS4120T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High efficiency leading to less heat generation
· Reduced printed-circuit board requirements
· Cost effective alternative to MOSFETs in specific applications.


Application

` Power management
DC/DC conversion
Supply line switching
Battery charger
LCD backlighting.
` Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motors).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base -

20

 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM average collector current   - 3 A
IBM peak base current   - 300 A
Ptot total power dissipation Tamb 25 °C;note 1
 - 300 mW
Tamb 25 °C;note 2 - 480 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.


Description

NPN BISS transistor PBSS4120T in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.

PNP complement: PBSS5120T.


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