PBSS3540F

Features: · Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat leads· Enhanced performance over SOT23 general purpose transistors.Application· General purpose switching and muting· Low frequency driver circuits· Audio frequency general purpose...

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SeekIC No. : 004455628 Detail

PBSS3540F: Features: · Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat leads· Enhanced performance over SOT23 general purpose transistors.Application· ...

floor Price/Ceiling Price

Part Number:
PBSS3540F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat leads
· Enhanced performance over SOT23 general purpose transistors.



Application

· General purpose switching and muting
· Low frequency driver circuits
· Audio frequency general purpose applications
· Battery driven equipment (mobile phones, video cameras, hand-held devices).



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
-40
V
VCEO
collector-emitter voltage
open base
-
-40
V
VEBO
emitter-base voltage
open collector
-
-6
V
IC
collector current (DC)
-
-500
mA
ICM
peak collector current
-
-1
A
IBM
peak base current
-
-100
mA
Ptot
total power dissipation
Tamb 25 °C
-
250
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
-65
+150
°C



Description

PNP low VCEsat transistor PBSS3540F in a SC-89 (SOT490) plastic package.
NPN complement: PBSS2540F.


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