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PBSS3515F

Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal behaviour due to flat leads.Application· General purpose switching and muting· Low frequency driver circuits· LCD backlighting· Audio frequency general purpose amplifier applications· Battery driven e...

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SeekIC No. : 004455625 Detail

PBSS3515F: Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal behaviour due to flat leads.Application· General purpose switching and muting· Low frequency driver ...

PBSS3515F Data Sheet

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Part Number:
PBSS3515F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capabilities
· Improved thermal behaviour due to flat leads.


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -15 V
VCEO collector-emitter voltage open base - -15 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC)   - -500 A
ICM peak collector current Tj max - -1 A
IB base current (DC)   - -100 mA
Ptot total power dissipation Tamb 25 °C - 250

 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C



Description

PNP low VCEsat transistor PBSS3515F in a SC-89 (SOT490) plastic package.

NPN complement: PBSS2515F.




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