Specifications Item Symbol PBMB200A6 Unit Collector-Emitter Voltage VCES 600 V Gate - Emitter Voltage VCES +/ - 20 V Collector Current DC IC 75 A 1ms ICp 150 Collector Power Dissipation PC 320 W Junction Temperature Range TJ -40 to +150 °C St...
PBMB75A6: Specifications Item Symbol PBMB200A6 Unit Collector-Emitter Voltage VCES 600 V Gate - Emitter Voltage VCES +/ - 20 V Collector Current DC IC 75 A 1ms ICp 150 ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SpecificationsDescriptionThe PBMB100B12 is designed as one kind of IGBT module with H-bridge 100A ...
Item | Symbol | PBMB200A6 | Unit | |
Collector-Emitter Voltage | VCES | 600 | V | |
Gate - Emitter Voltage | VCES | +/ - 20 | V | |
Collector Current | DC | IC | 75 | A |
1ms | ICp | 150 | ||
Collector Power Dissipation | PC | 320 | W | |
Junction Temperature Range | TJ | -40 to +150 | °C | |
Storage Temperature Range | Tstg | -40 to +125 | °C | |
Isolation Voltage Terminal to Base AC, 1 min.) | VISO | 2500 | V | |
Mounting Torque | Module Base to Heatsink | FTOR | 2 | Nm |
Bus Bar to Main Terminals |