PBMB100B12

The PBMB100B12 is designed as one kind of IGBT module with H-bridge 100A 1200V. The absolute maximum ratings of the PBMB100B12 can be summarized as:(1)Collector-Emitter Voltage: 1200 V;(2)Gate - Emitter Voltage: +/- 20 V;(3)Collector Current: 100 or 200 A;(4)Collector Power Dissipation: 500 W;(5)Junction Temperature Range: -40 to +150 °C;(6)Storage Temperature Range: -40 to +125 °C;(7)Isolation Voltage Terminal to Base AC, 1 min.): 2500 V;(8)Mounting Torque: 3 N•m.

The electrical characteristics of the PBMB100B12 can be summarized as:(1)Collector-Emitter Cut-Off Current: 2.0 mA;(2)Gate-Emitter Leakage Current: 1.0 A;(3)Collector-Emitter Saturation Voltage: 1.9 to 2.4 V;(4)Gate-Emitter Threshold Voltage: 4.0 to 8.0 V;(5)Input Capacitance: 8300 pF. If you want to know more information about the PBMB100B12, please download the datasheet in www.seekic.com or www.chinaicmart.com .