Specifications Item Symbol PBMB200A6 Unit Collector-Emitter Voltage VCES 1200 V Gate - Emitter Voltage VCES +/ - 20 V Collector Current DC IC 50 A 1ms ICp 100 Collector Power Dissipation PC 250 W Junction Temperature Range TJ -40 to +150 °C S...
PBMB50B12C: Specifications Item Symbol PBMB200A6 Unit Collector-Emitter Voltage VCES 1200 V Gate - Emitter Voltage VCES +/ - 20 V Collector Current DC IC 50 A 1ms ICp 100 ...
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SpecificationsDescriptionThe PBMB100B12 is designed as one kind of IGBT module with H-bridge 100A ...
Item | Symbol | PBMB200A6 | Unit | |
Collector-Emitter Voltage | VCES | 1200 | V | |
Gate - Emitter Voltage | VCES | +/ - 20 | V | |
Collector Current | DC | IC | 50 | A |
1ms | ICp | 100 | ||
Collector Power Dissipation | PC | 250 | W | |
Junction Temperature Range | TJ | -40 to +150 | °C | |
Storage Temperature Range | Tstg | -40 to +125 | °C | |
Isolation Voltage Terminal to Base AC, 1 min.) | VISO | 2500 | V | |
Mounting Torque | Module Base to Heatsink | FTOR | 2 | Nm |
Bus Bar to Main Terminals | - |