DescriptionThe PBMB50A6 is designed as one kind of IGBT module with H-bridge 100A 600V. The absolute maximum ratings of the PBMB50A6 can be summarized as:(1)Collector-Emitter Voltage: 600 V;(2)Gate - Emitter Voltage: +/- 20 V;(3)Collector Current: 50 or 100 A;(4)Collector Power Dissipation: 250 W;...
PBMB50A6: DescriptionThe PBMB50A6 is designed as one kind of IGBT module with H-bridge 100A 600V. The absolute maximum ratings of the PBMB50A6 can be summarized as:(1)Collector-Emitter Voltage: 600 V;(2)Gate ...
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SpecificationsDescriptionThe PBMB100B12 is designed as one kind of IGBT module with H-bridge 100A ...
The PBMB50A6 is designed as one kind of IGBT module with H-bridge 100A 600V. The absolute maximum ratings of the PBMB50A6 can be summarized as:(1)Collector-Emitter Voltage: 600 V;(2)Gate - Emitter Voltage: +/- 20 V;(3)Collector Current: 50 or 100 A;(4)Collector Power Dissipation: 250 W;(5)Junction Temperature Range: -40 to +150 °C;(6)Storage Temperature Range: -40 to +125 °C;(7)Isolation Voltage Terminal to Base AC, 1 min.): 2500 V;(8)Mounting Torque: 2 N•m.
The electrical characteristics of the PBMB50A6 can be summarized as:(1)Collector-Emitter Cut-Off Current: 1.0 mA;(2)Gate-Emitter Leakage Current: 1.0 A;(3)Collector-Emitter Saturation Voltage: 2.0 to 2.5 V;(4)Gate-Emitter Threshold Voltage: 4.0 to 8.0 V;(5)Input Capacitance: 5000 pF. If you want to know more information about the PBMB50A6, please download the datasheet in www.seekic.com or www.chinaicmart.com .