PBL40309

Features: • 27 dBm output power• 25 dB small signal gain• 50 % Power Added Efficiency• Simple logic on/off power control• Battery charging conditions to 5.0 V• ESD protected• Excellent ruggedness• On-chip input and interstage matching• Differen...

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PBL40309 Picture
SeekIC No. : 004455580 Detail

PBL40309: Features: • 27 dBm output power• 25 dB small signal gain• 50 % Power Added Efficiency• Simple logic on/off power control• Battery charging conditions to 5.0 V• ES...

floor Price/Ceiling Price

Part Number:
PBL40309
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 27 dBm output power
• 25 dB small signal gain
• 50 % Power Added Efficiency
• Simple logic on/off power control
• Battery charging conditions to 5.0 V
• ESD protected
• Excellent ruggedness
• On-chip input and interstage matching
• Differential input matched to 50
• Easy implementation with a simple output matching network
• Proven RF Silicon Technology Reliability
• Low overall solution cost



Application

• DECT


Pinout

  Connection Diagram


Specifications

Parameter Symbol Min. Max. Unit
Supply voltage, continuous Vcc - 5.2 V
All inputs (zener protection)     6.5 V
Operating case temperature Top -25 +80 °C
Storage temperature range TStg -30 +100 °C



Description

The PBL 403 09 is a differential two stage silicon MMIC power amplifier intended for use in handheld cordless terminals in the 1900 MHz band. PBL40309 can deliver more than 27 dBm at 1900 MHz into a balanced 50 W load using a single 3.6 V supply. The circuit has a logic input to control transmit on/off and can be operated up to 100 % duty cycle with minimum performance degradation. The circuit PBL40309 is housed in a specially designed QSOP16 (150 mil body ) package and the implementation requires only few external components.

25 GHz ft state-of-the-art deep trench isolated double-poly silicon bipolar process with additional features of PBL40309 for improved wireless performance has been used. On-chip capacitors of PBL40309 and inductors are used for the integrated internal matching network. Special front-side metallized substrate contacts provide excellent ground paths from active devices to the highly doped semiconductor substrate and package ground.




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