PA2706TP

• Low on-state resistance
   R_DS(on)1 = 15 m MAX. (V_GS = 10 V, I_D = 5.5 A)
   R_DS(on)2 = 22.5 m MAX. (V_GS = 4.5 V, I_D = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (V_DS = 10 V, V_GS = 0 V)
• Small and surface mount package (Power HSOP8)

ABSOLUTE MAXIMUM RATINGS (T_A = 25, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (V_GS = 0 V) ................................V_DSS ..........................30 ...........V
Gate to Source Voltage (V_DS = 0 V) .................................V_GSS ........................±20 ...........V
Drain Current (DC) (T_C = 25°C) .......................................I_D(DC)1 ....................±20 ...........A
Drain Current (DC) ^Note1 ..................................................I_D(DC)2 ....................±11 ...........A
Drain Current (pulse) ^Note2 ..............................................I_D(pulse) ...................±44 ...........A
Total Power Dissipation (T_C = 25°C) ................................P_T1 .............................15 ..........W
Total Power Dissipation ^Note1 ..........................................P_T2 ................................3 ..........W
Channel Temperature ......................................................T_ch .............................150 ..........
Storage Temperature ......................................................T_stg ...............−55 to +150 ..........
Single Avalanche Current ^Note3 .......................................I_AS ................................11 ...........A
Single Avalanche Energy ^Note3 .........................................E_AS ...........................12.1 ......... mJ

Notes
1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, P_W = 10 sec
2. PW 10 s, Duty Cycle 1%
3. Starting T_ch = 25°C, V_DD = 15 V, R_G = 25 , L = 100 H, V_GS = 20 0 V

Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

The PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.