PA2706GR

• Low on-state resistance
   R_DS(on)1 = 15 m MAX. (V_GS = 10 V, I_D = 5.5 A)
   R_DS(on)2 = 22.5 m MAX. (V_GS = 4.5 V, I_D = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (V_DS = 10 V, V_GS = 0 V)
• Small and surface mount package (Power SOP8)

ABSOLUTE MAXIMUM RATINGS (T_A = 25, All terminals are connected)
Drain to Source Voltage (V_GS = 0 V) .............................V_DSS.................... 30 ...............V
Gate to Source Voltage (V_DS = 0 V) ..............................V_GSS ..................±20 ...............V
Drain Current (DC) ........................................................I_D(DC) ................±11 ...............A
Drain Current (pulse) ^Note1 ............................................I_D(pulse) ............±44 ..............A
Total Power Dissipation (T_A = 25) ^Note2 .....................P_T ......................2.0 ...............W
Channel Temperature ................................................... T_ch ....................150 ...............
Storage Temperature ....................................................T_stg ..............−55 to + 150.....  
Single Avalanche Current ^Note3  ....................................I_AS .....................11................. A
Single Avalanche Energy ^Note3  .....................................E_AS ....................12.1 .............mJ

Notes
1. PW 10 s, Duty Cycle 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting T_ch = 25°C, V_DD = 15 V, R_G = 25 , L = 100 H, V_GS = 20 0 V

Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimatelydegrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The PA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.