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P75N02LD

Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 75 A TC = 100 °C 50 Avalanche Current IAR 60 Pulsed Drain Current1 IDM 170 Avalanche Energy L = 0.1mH EAS 140 mJ Repetitiv...

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P75N02LD: Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 75 A TC = 100 °C 50 Avalanche Current ...

P75N02LD Data Sheet

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Part Number:
P75N02LD
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Specifications

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC = 25 °C ID 75 A
TC = 100 °C 50
Avalanche Current IAR 60
Pulsed Drain Current1 IDM 170
Avalanche Energy L = 0.1mH EAS 140 mJ
Repetitive Avalanche Energy2 L = 0.05mH EAR 5.6
Power Dissipation TC = 25 °C PD 65 W
TC = 100 °C 38
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
Lead Temperature (1/16" from case for 10 sec.) TL 275



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