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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 15Watts 100 C/W 200 oC -65OC to 1500C 1.6 A 70 V ...

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SeekIC No. : 004439124 Detail

P282: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

P282 Data Sheet

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Part Number:: P282
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/24

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Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
15Watts	10⁰C/W	200 ^oC	-65^OC to 150⁰C	1.6 A	70 V	70 V	30V

Description

Silicon VDMOS and LDMOS transistors P282 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" process of P282 features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance

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P282

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