Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 15Watts 100 C/W 200 oC -65OC to 1500C 1.6 A 70 V ...
P282: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
15Watts |
100 C/W |
200 oC |
-65OC to 1500C |
1.6 A |
70 V |
70 V |
30V |
Silicon VDMOS and LDMOS transistors P282 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process of P282 features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance