Features: 26 dB Small Signal Gain39 dBm Third Order Intercept Point (OIP3)Integrated Power Detector4x4mm QFN Package, RoHS Compliant100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +7.2V Supply Current (Id1,2,3) 600 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (P...
P1035-QH: Features: 26 dB Small Signal Gain39 dBm Third Order Intercept Point (OIP3)Integrated Power Detector4x4mm QFN Package, RoHS Compliant100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +7.2V...
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Supply Voltage (Vd1,2,3) | +7.2V |
Supply Current (Id1,2,3) | 600 mA |
Gate Bias Voltage (Vg1,2,3) | -3V |
Max Power Dissipation (Pdiss) | 4.2W |
RF Input Power | +15 dBm |
Storage Temperature (Tstg) | -65 to +150 |
Operating Temperature (Ta) | -55 to + 85 |
Channel Temperature (Tch) | -40 to MTTF Graph2 |
The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band. The P1035-QH provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.