P1035-QH

Features: 26 dB Small Signal Gain39 dBm Third Order Intercept Point (OIP3)Integrated Power Detector4x4mm QFN Package, RoHS Compliant100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +7.2V Supply Current (Id1,2,3) 600 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (P...

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SeekIC No. : 004438980 Detail

P1035-QH: Features: 26 dB Small Signal Gain39 dBm Third Order Intercept Point (OIP3)Integrated Power Detector4x4mm QFN Package, RoHS Compliant100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +7.2V...

floor Price/Ceiling Price

Part Number:
P1035-QH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

26 dB Small Signal Gain
39 dBm Third Order Intercept Point (OIP3)
Integrated Power Detector
4x4mm QFN Package, RoHS Compliant
100% RF Testing



Specifications

Supply Voltage (Vd1,2,3) +7.2V
Supply Current (Id1,2,3) 600 mA
Gate Bias Voltage (Vg1,2,3) -3V
Max Power Dissipation (Pdiss) 4.2W
RF Input Power +15 dBm
Storage Temperature (Tstg) -65 to +150
Operating Temperature (Ta) -55 to + 85
Channel Temperature (Tch) -40 to MTTF Graph2
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF.Channel temperature should be kept as low as possible to maximize lifetime.



Description

The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band. The P1035-QH provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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